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| CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage selfbiased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in lead-free, hermetic package compatible for space application. Gain & NF @ Vd=4V Main Features Broadband performance 5.8-16GHz 2.8dB maximum noise figure 24dBm 3rd order intercept point 16dBm power at 1dB compression 20dB gain Low DC power consumption 12L-Glass/metal hermetic package 24 22 20 18 16 14 12 10 8 6 4 2 0 4 6 8 10 Frequency (GHz) Gain & NF (dB) Gain NF 12 14 16 Main Characteristics Tamb = +25 Vd = +4V, Id=80mA C, Symbol NF G IP3 Parameter Noise figure Smal signal Gain 3rd order intercept point 16 Min Typ 2.1 20 24 Max 2.8 Unit dB dB dBm ESD Protections : Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCHA3666-SNF7208 - 27 Jul 07 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3666-SNF Electrical Characteristics Temp = +25 Vd=4V (1) C, Symbol Fop G G NF IS11I IS22I IP3 P1dB Vd Id Parameter Operating frequency range Gain Gain flatness Noise figure Input return loss Ouput return loss 3rd order intercept point Output power at 1dB gain comp Drain bias voltage Drain bias current 5.8-16GHz Low Noise Amplifier Min 5.8 16 Typ 20 1 2.1 2.3:1 1.9:1 24 Max 16 Unit GHz dB dB 2.8 3:1 2.5:1 dB dBm dBm V 100 mA 14.5 16 4 60 80 (1) These values are representative of on board measurements as defined on the drawing 96446 (see below). Absolute Maximum Ratings (1) Temp = +25 C Symbol Vd Pin Top Tj Parameter Drain bias voltage RF input power Operating temperature range (2) Junction temperature (3) Storage temperature range Values 4.5 10 -40 to +85 175 Unit V dBm C C Tstg -55 to +125 C (1) Operation of this device above anyone of these paramaters may cause permanent damage (2) Top = Package Ground Paddle back side temperature (3) Thermal Resistance channel to ground paddle =214 C/W for Tground paddle = +85 C Ref: DSCHA3666-SNF7208 - 27 Jul 07 2/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5.8-16GHz Low Noise Amplifier CHA3666-SNF Typical Package Sij parameters for low current configuration in 96446 board - in connector plane - Temp = +25 Vd= +4V , typical Id=80mA C, F(GHz) 0.1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 dBS11 PhS11( dBS21 PhS21( dBS12 PhS12( dBS22 P hS22( NF(dB) ) ) ) ) -0.02 -12.36 -60.38 139.48 -64.76 -124.85 -0.03 -12.38 -0.20 -120.14 -51.96 106.43 -66.83 84.74 -0.34 -120.02 -0.39 -177.23 -48.22 -127.20 -75.55 124.32 -0.77 -176.02 -0.64 123.96 -24.00 167.40 -68.76 -7.25 -1.69 130.69 -0.98 57.81 -14.91 110.27 -59.27 -25.95 -1.37 74.27 -1.57 -21.16 2.92 44.44 -57.06 -110.13 -2.84 -3.77 -2.43 -110.87 12.31 -67.44 -66.93 153.56 -6.78 -71.82 -4.34 154.20 17.54 -172.21 -59.56 -102.75 -9.70 -124.50 -8.12 54.55 20.34 89.22 -48.72 172.09 -11.01 -165.12 -11.16 -52.92 21.42 -1.47 -44.68 96.06 -11.04 153.87 -10.35 -138.28 21.70 -83.26 -43.11 23.69 -11.58 110.50 -9.06 161.41 21.76 -159.03 -41.87 -42.92 -12.71 65.18 2.263 -8.66 111.23 21.72 129.68 -41.28 -105.13 -14.26 11.83 -9.03 65.00 21.79 61.19 -40.42 -164.80 -16.11 -62.21 -10.14 17.00 21.85 -6.81 -39.54 131.57 -16.10 -149.55 -12.21 -34.04 21.81 -73.75 -39.48 67.94 -13.34 133.51 1.929 -14.28 -97.49 21.67 -139.41 -39.49 7.97 -11.71 74.57 -14.46 -177.11 21.35 155.94 -39.32 -51.71 -10.50 25.06 -11.85 115.71 21.14 93.78 -38.14 -111.12 -10.61 -21.62 -9.69 55.02 20.92 31.53 -38.25 -168.04 -10.53 -64.86 2.016 -9.00 2.05 20.74 -29.49 -37.65 133.49 -11.26 -109.97 -9.36 -50.93 20.64 -90.59 -37.24 78.04 -12.62 -160.01 -10.99 -107.09 20.57 -151.94 -36.71 19.74 -14.09 145.24 -12.72 -174.74 20.45 146.68 -36.63 -39.71 -14.50 86.87 2.026 -12.50 110.72 20.31 85.40 -36.74 -98.01 -13.20 31.84 -10.35 48.31 20.14 24.29 -36.68 -153.72 -11.87 -17.92 -8.87 -4.04 19.98 -36.89 -36.98 149.45 -10.88 -63.55 -8.70 -47.93 19.82 -98.74 -36.97 93.10 -11.28 -108.47 2.33 -9.89 -87.63 19.42 -160.87 -36.83 36.08 -12.37 -154.57 -11.55 -117.88 18.99 138.15 -36.64 -19.54 -16.65 149.97 -12.35 -149.85 18.67 75.82 -35.86 -77.12 -35.87 84.18 -10.37 165.68 17.13 10.79 -34.33 -150.29 -14.27 -163.03 2.809 -7.75 69.16 16.68 -24.68 -43.15 114.42 -10.90 82.97 -9.93 3.68 18.88 -98.63 -43.49 134.87 -15.99 65.62 -9.39 -43.54 17.96 -166.15 -38.62 98.95 -11.57 36.49 -8.11 -93.30 17.52 132.71 -34.16 37.05 -8.63 -13.07 3.607 -9.91 -155.23 17.16 68.45 -31.76 -32.73 -8.10 -70.38 -12.43 127.43 16.80 3.23 -31.36 -105.37 -11.09 -126.69 -11.75 15.00 15.77 -67.74 -32.93 -168.03 -15.17 -179.57 -9.90 -67.91 13.59 -133.13 -31.81 140.77 -15.84 102.41 Ref: DSCHA3666-SNF7208 - 27 Jul 07 3/10 Specifications subject to change without notice Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA3666-SNF Typical Measured Performance Temp = +25 Vd=4V (Id=80mA) C, 5.8-16GHz Low Noise Amplifier Measurements in the connector planes, using the proposed land patern & board 96446. Gain Rlosses & NF @Vd=4V 25 20 15 Gain RLosses & NF (dB) 10 5 0 -5 -10 -15 -20 -25 4 NF Gain S11 S22 6 8 10 Frequency (GHz) 12 14 16 NF@Vd=4V 4 3.75 3.5 3.25 3 2.75 2.5 2.25 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 6 7 8 9 NF - test board included NF (dB) 10 11 12 13 14 15 16 Frequency (GHz) Ref: DSCHA3666-SNF7208 - 27 Jul 07 4/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5.8-16GHz Low Noise Amplifier Output power at 1dB compression versus frequency 18 CHA3666-SNF 17.5 Pout -1dB (dBm) 17 16.5 16 15.5 P1dB1 Vd=4V 15 14.5 14 6 7 8 9 10 11 12 13 14 15 16 Freq (GHz) Ref: DSCHA3666-SNF7208 - 27 Jul 07 5/10 Specifications subject to change without notice Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA3666-SNF 5.8-16GHz Low Noise Amplifier C/I3 versus output power 55 50 45 40 C/I3(dB) 35 CI3 6GHz 30 25 20 15 10 0 2 4 6 8 10 12 14 16 18 Single Output power (dBm) CI3 7GHz CI3 8GHz CI3 10GHz CI3 12GHz CI3 14GHz CI3 16GHz Output IP3 versus output power 30 28 26 24 Output IP3 (dBm) 22 20 18 16 14 12 10 0 2 4 6 8 10 12 14 16 18 Single Output power (dBm) IP3 6GHz IP3 7GHz IP3 8GHz IP3 10GHz IP3 12GHz IP3 14GHz IP3 16GHz Ref: DSCHA3666-SNF7208 - 27 Jul 07 6/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5.8-16GHz Low Noise Amplifier Package outline (dim. mm): CHA3666-SNF (*) Pin 2 and 11 should be chosen alternatively Ref: DSCHA3666-SNF7208 - 27 Jul 07 7/10 Specifications subject to change without notice Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA3666-SNF 5.8-16GHz Low Noise Amplifier Proposed Assembly board "96446" for the 12L-GlassMetal package products characterization. Compatible with the proposed footprint. Based on typically Ro4003 / 8mils or equivalent. Using a microstrip to coplanar transition to access the package. Two biasing side options (pin 2 and 11) - decoupling capacitance 10nF. Recommended for the implementation of this product on a module board. - Ref: DSCHA3666-SNF7208 - 27 Jul 07 8/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5.8-16GHz Low Noise Amplifier Package Biasing options CHA3666-SNF This chip is self-biased, and flexibility is provided by the access to number of leads. The internal DC electrical schematic is given in order to use these leads in a safe way. Vd1 1.5K Vd 3.1K 40 Pin 2 or 11 Vd2 2.5 0.3K 0.3K Pin 5 RFin 90 90 20 20 8 RFout Pin 8 P1 Standard biasing: Low Noise and low consumption: P2 N2 Vd= 4V Idd = 80mA & Pout-1dB = 16dBm Typical. Ref: DSCHA3666-SNF7208 - 27 Jul 07 9/10 Specifications subject to change without notice Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA3666-SNF 5.8-16GHz Low Noise Amplifier Ordering Information Glass/Metal 12L RoHS compliant hermetic package: Tray: XY = 20 CHA3666-SNF/XY Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref: DSCHA3666-SNF7208 - 27 Jul 07 10/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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